Resistive Switching Behaviors of Magnesium Zirconia Nickel Nanorods by Solution Process for Resistive Random Access Memory

• Main Authors: Tzu-HanSu, 蘇子涵
• Other Authors: Yeong-Her Wang
• Format: Others
• Language: en_US
• Published: 2019
• Online Access: http://ndltd.ncl.edu.tw/handle/hdyyq9

碩士 === 國立成功大學 === 微電子工程研究所 === 107 === To effectively improve the uniformity of switching behavior in resistive switching devices, the magnesium zirconia nickel (MZN) nanorods (NRs) on ITO electrodes using the low-temperature and easy fabricated hydrothermal method will be presented. The field emission scanning electron microscope (SEM) image shows the formation of the nanorods, which were 10 µm long, 200nm wide cuboid, and density is around 600/mm2. The Energy Dispersive Spectrometer (EDS) mapping has confirmed the element composition of the MZN nanorods. According to different process time, the density of MZN nanorods can be modified, which will also influence the electrical characteristics of the devices. The Al/MZN nanorods/ITO structure exhibits the forming-free and bipolar resistive switching behavior. Compared to the MZN thin film, MZN nanorods has relative higher ON/OFF ratio and better uniformity. The better ON/OFF ratio and uniformity can be attributed to the distinct geometry of MZN nanorods leads to the formation of straight and extensible conducting filaments along the direction of MZN nanorods. The switching mechanism of both MZN thin film and MZN nanorods RRAM devices are ohmic in LRS and SCLC in HRS, which are highly reproducible. Additionally, MZN thin film can also apply in MIM diode. The diode electrical characteristics of the W/MZN/ZrO2/ITO structure has been demonstrated, which is more stable than MIM diodes. These results suggest that MZN material has a wide range of application, include RRAM, diode, and 1-diode-1-resistor fabricated from combining diode and RRAM to solve the sneak-path current in the 3D cross bar array.