Resistive Switching Behaviors of Magnesium Zirconia Nickel Nanorods by Solution Process for Resistive Random Access Memory
碩士 === 國立成功大學 === 微電子工程研究所 === 107 === To effectively improve the uniformity of switching behavior in resistive switching devices, the magnesium zirconia nickel (MZN) nanorods (NRs) on ITO electrodes using the low-temperature and easy fabricated hydrothermal method will be presented. The field emiss...
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ndltd-TW-107NCKU54280372019-10-26T06:24:15Z http://ndltd.ncl.edu.tw/handle/hdyyq9 Resistive Switching Behaviors of Magnesium Zirconia Nickel Nanorods by Solution Process for Resistive Random Access Memory 以溶液法製備鋯鎳酸鎂奈米柱電阻式記憶體之研究 Tzu-HanSu 蘇子涵 碩士 國立成功大學 微電子工程研究所 107 To effectively improve the uniformity of switching behavior in resistive switching devices, the magnesium zirconia nickel (MZN) nanorods (NRs) on ITO electrodes using the low-temperature and easy fabricated hydrothermal method will be presented. The field emission scanning electron microscope (SEM) image shows the formation of the nanorods, which were 10 µm long, 200nm wide cuboid, and density is around 600/mm2. The Energy Dispersive Spectrometer (EDS) mapping has confirmed the element composition of the MZN nanorods. According to different process time, the density of MZN nanorods can be modified, which will also influence the electrical characteristics of the devices. The Al/MZN nanorods/ITO structure exhibits the forming-free and bipolar resistive switching behavior. Compared to the MZN thin film, MZN nanorods has relative higher ON/OFF ratio and better uniformity. The better ON/OFF ratio and uniformity can be attributed to the distinct geometry of MZN nanorods leads to the formation of straight and extensible conducting filaments along the direction of MZN nanorods. The switching mechanism of both MZN thin film and MZN nanorods RRAM devices are ohmic in LRS and SCLC in HRS, which are highly reproducible. Additionally, MZN thin film can also apply in MIM diode. The diode electrical characteristics of the W/MZN/ZrO2/ITO structure has been demonstrated, which is more stable than MIM diodes. These results suggest that MZN material has a wide range of application, include RRAM, diode, and 1-diode-1-resistor fabricated from combining diode and RRAM to solve the sneak-path current in the 3D cross bar array. Yeong-Her Wang 王永和 2019 學位論文 ; thesis 112 en_US |
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碩士 === 國立成功大學 === 微電子工程研究所 === 107 === To effectively improve the uniformity of switching behavior in resistive switching devices, the magnesium zirconia nickel (MZN) nanorods (NRs) on ITO electrodes using the low-temperature and easy fabricated hydrothermal method will be presented. The field emission scanning electron microscope (SEM) image shows the formation of the nanorods, which were 10 µm long, 200nm wide cuboid, and density is around 600/mm2. The Energy Dispersive Spectrometer (EDS) mapping has confirmed the element composition of the MZN nanorods. According to different process time, the density of MZN nanorods can be modified, which will also influence the electrical characteristics of the devices. The Al/MZN nanorods/ITO structure exhibits the forming-free and bipolar resistive switching behavior. Compared to the MZN thin film, MZN nanorods has relative higher ON/OFF ratio and better uniformity. The better ON/OFF ratio and uniformity can be attributed to the distinct geometry of MZN nanorods leads to the formation of straight and extensible conducting filaments along the direction of MZN nanorods. The switching mechanism of both MZN thin film and MZN nanorods RRAM devices are ohmic in LRS and SCLC in HRS, which are highly reproducible. Additionally, MZN thin film can also apply in MIM diode. The diode electrical characteristics of the W/MZN/ZrO2/ITO structure has been demonstrated, which is more stable than MIM diodes. These results suggest that MZN material has a wide range of application, include RRAM, diode, and 1-diode-1-resistor fabricated from combining diode and RRAM to solve the sneak-path current in the 3D cross bar array.
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author2 |
Yeong-Her Wang |
author_facet |
Yeong-Her Wang Tzu-HanSu 蘇子涵 |
author |
Tzu-HanSu 蘇子涵 |
spellingShingle |
Tzu-HanSu 蘇子涵 Resistive Switching Behaviors of Magnesium Zirconia Nickel Nanorods by Solution Process for Resistive Random Access Memory |
author_sort |
Tzu-HanSu |
title |
Resistive Switching Behaviors of Magnesium Zirconia Nickel Nanorods by Solution Process for Resistive Random Access Memory |
title_short |
Resistive Switching Behaviors of Magnesium Zirconia Nickel Nanorods by Solution Process for Resistive Random Access Memory |
title_full |
Resistive Switching Behaviors of Magnesium Zirconia Nickel Nanorods by Solution Process for Resistive Random Access Memory |
title_fullStr |
Resistive Switching Behaviors of Magnesium Zirconia Nickel Nanorods by Solution Process for Resistive Random Access Memory |
title_full_unstemmed |
Resistive Switching Behaviors of Magnesium Zirconia Nickel Nanorods by Solution Process for Resistive Random Access Memory |
title_sort |
resistive switching behaviors of magnesium zirconia nickel nanorods by solution process for resistive random access memory |
publishDate |
2019 |
url |
http://ndltd.ncl.edu.tw/handle/hdyyq9 |
work_keys_str_mv |
AT tzuhansu resistiveswitchingbehaviorsofmagnesiumzirconianickelnanorodsbysolutionprocessforresistiverandomaccessmemory AT sūzihán resistiveswitchingbehaviorsofmagnesiumzirconianickelnanorodsbysolutionprocessforresistiverandomaccessmemory AT tzuhansu yǐróngyèfǎzhìbèigàonièsuānměinàimǐzhùdiànzǔshìjìyìtǐzhīyánjiū AT sūzihán yǐróngyèfǎzhìbèigàonièsuānměinàimǐzhùdiànzǔshìjìyìtǐzhīyánjiū |
_version_ |
1719279395895508992 |