Study of ISFETs with APTES/Al2O3 Stacked Sensing Membranes

• Main Authors: LI, CHUN-YI, 李俊逸
• Other Authors: CHEN, JIANN-HENG
• Format: Others
• Language: zh-TW
• Published: 2019
• Online Access: http://ndltd.ncl.edu.tw/handle/985rz3

碩士 === 國立暨南國際大學 === 電機工程學系 === 107 === In this study, Al2O3 was deposited as sensing membranes of ISFETs and EGFETs. Self-assembly monolayers, (3-Aminopropyl)triethoxysilane, APTES, were grown on the sensing membranes as a linker between Al2O3 and biomolecule. ISFETs and EGFETs with APTES/Al2O3 stacked sensing membranes were investigated for high sensitivity transducers in biosensors. In the results, the contact angle measurement was performed to study the surface properties of Al2O3. The EGFETs with APTES/Al2O3 stacked sensing membranes exhibited higher sensitivity, lower hysteresis, and lower drift comparing to the control samples. The EGFETs with the stacked sensing membranes with the Al2O3 thickness of about ~20 nm exhibited the best performance comparing to others.