High Sn Concentration GeSn MOSCAP and MOSFET Fabricated by Low Temperature Atomic Layer Deposition Process
碩士 === 國立暨南國際大學 === 電機工程學系 === 107 === In this work, we study on GeSn channel junctionless transistor. A high Sn concentration GeSn MOSCAP and junctionless FinFET were designed and fabricated. Unlike the traditional MOSFETs, the junctionless-FET depicts the same doping concentration on the source,...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2019
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| Online Access: | http://ndltd.ncl.edu.tw/handle/r8kvpm |