High Sn Concentration GeSn MOSCAP and MOSFET Fabricated by Low Temperature Atomic Layer Deposition Process

High Sn Concentration GeSn MOSCAP and MOSFET Fabricated by Low Temperature Atomic Layer Deposition Process

碩士 === 國立暨南國際大學 === 電機工程學系 === 107 === In this work, we study on GeSn channel junctionless transistor. A high Sn concentration GeSn MOSCAP and junctionless FinFET were designed and fabricated. Unlike the traditional MOSFETs, the junctionless-FET depicts the same doping concentration on the source,...

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Main Authors: TSAI, XIN-RU, 蔡昕儒
Other Authors: Chen, Jiann-Heng
Format: Others
Language:zh-TW
Published: 2019
Online Access:http://ndltd.ncl.edu.tw/handle/r8kvpm
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spelling ndltd-TW-107NCNU04420302019-09-20T03:25:53Z http://ndltd.ncl.edu.tw/handle/r8kvpm High Sn Concentration GeSn MOSCAP and MOSFET Fabricated by Low Temperature Atomic Layer Deposition Process 使用低溫原子層沉積技術製作高錫摻雜之鍺錫金氧半電容與金氧半電晶體 TSAI, XIN-RU 蔡昕儒 碩士 國立暨南國際大學 電機工程學系 107 In this work, we study on GeSn channel junctionless transistor. A high Sn concentration GeSn MOSCAP and junctionless FinFET were designed and fabricated. Unlike the traditional MOSFETs, the junctionless-FET depicts the same doping concentration on the source, drain and channel . We also use Ni as contact metal in order to reduce the contact resistance between the metal-semiconductor, and this could improve its on/off ratio. In other hand, we investigate temperature effects on the high Sn concentration GeSn. Also, we discuss the different treatment to the interfacial layer. Finally, we successfully fabricated High Sn concentration GeSn MOSCAP and MOSFET with the high on/off ratio 2.53 x104 by using low temperature atomic layer deposition process. Chen, Jiann-Heng 陳建亨 2019 學位論文 ; thesis 49 zh-TW
collection NDLTD
language zh-TW
format Others
sources NDLTD
description 碩士 === 國立暨南國際大學 === 電機工程學系 === 107 === In this work, we study on GeSn channel junctionless transistor. A high Sn concentration GeSn MOSCAP and junctionless FinFET were designed and fabricated. Unlike the traditional MOSFETs, the junctionless-FET depicts the same doping concentration on the source, drain and channel . We also use Ni as contact metal in order to reduce the contact resistance between the metal-semiconductor, and this could improve its on/off ratio. In other hand, we investigate temperature effects on the high Sn concentration GeSn. Also, we discuss the different treatment to the interfacial layer. Finally, we successfully fabricated High Sn concentration GeSn MOSCAP and MOSFET with the high on/off ratio 2.53 x104 by using low temperature atomic layer deposition process.
author2 Chen, Jiann-Heng
author_facet Chen, Jiann-Heng
TSAI, XIN-RU
蔡昕儒
author TSAI, XIN-RU
蔡昕儒
spellingShingle TSAI, XIN-RU
蔡昕儒
High Sn Concentration GeSn MOSCAP and MOSFET Fabricated by Low Temperature Atomic Layer Deposition Process
author_sort TSAI, XIN-RU
title High Sn Concentration GeSn MOSCAP and MOSFET Fabricated by Low Temperature Atomic Layer Deposition Process
title_short High Sn Concentration GeSn MOSCAP and MOSFET Fabricated by Low Temperature Atomic Layer Deposition Process
title_full High Sn Concentration GeSn MOSCAP and MOSFET Fabricated by Low Temperature Atomic Layer Deposition Process
title_fullStr High Sn Concentration GeSn MOSCAP and MOSFET Fabricated by Low Temperature Atomic Layer Deposition Process
title_full_unstemmed High Sn Concentration GeSn MOSCAP and MOSFET Fabricated by Low Temperature Atomic Layer Deposition Process
title_sort high sn concentration gesn moscap and mosfet fabricated by low temperature atomic layer deposition process
publishDate 2019
url http://ndltd.ncl.edu.tw/handle/r8kvpm
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