The Study of GaN Enhancement Mode Device Fabrication and Characteristic Improvements
碩士 === 國立交通大學 === 光電工程研究所 === 107 === In recent years, the issue of energy conservation has received great attention. In the past few years, GaN power device have been proven to be very helpful in energy saving. GaN has many advantages such as heat resistance, high electron saturation speed, high br...
| Main Authors: | , |
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| Format: | Others |
| Language: | en_US |
| Published: |
2018
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| Online Access: | http://ndltd.ncl.edu.tw/handle/rv877u |