Intrinsic stress and thermal expansion coefficient of PECVD silicon carbonitride films using silazane precursors
碩士 === 國立交通大學 === 材料科學與工程學系所 === 107 === Plasma-enhanced-chemical-vapor-deposition (PECVD) silicon carbonitride film (SiCxNy) have been applied as a material for fabricating cantilevers or membrane in the microelectromechanical systems (MEMS) due to its low deposition temperature and tunable mechani...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2018
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| Online Access: | http://ndltd.ncl.edu.tw/handle/d5heuw |