study of thin and high-quality GaAs buffer on patterned Si(001) substrate by metal-organic chemical vapor deposition
碩士 === 國立交通大學 === 材料科學與工程學系所 === 107 === The growth of thin and high-quality GaAs epilayer on the (100 x 100um) patterned Si (001) substrate was controlled by three factors, including AsH3 treatment, growth temperatures, and V/III ratios. We illustrate that the GaAs nucleation layer favors a smooth...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2018
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| Online Access: | http://ndltd.ncl.edu.tw/handle/wbh5rc |