study of thin and high-quality GaAs buffer on patterned Si(001) substrate by metal-organic chemical vapor deposition

• Main Authors: Lin, Kun-Yi, 林坤億
• Other Authors: Chang, Edward-Yi
• Format: Others
• Language: en_US
• Published: 2018
• Online Access: http://ndltd.ncl.edu.tw/handle/wbh5rc

碩士 === 國立交通大學 === 材料科學與工程學系所 === 107 === The growth of thin and high-quality GaAs epilayer on the (100 x 100um) patterned Si (001) substrate was controlled by three factors, including AsH3 treatment, growth temperatures, and V/III ratios. We illustrate that the GaAs nucleation layer favors a smooth morphology with AsH3 treatment, where the high degree of As coverage can help to reduce antiphase domain boundaries (APBs). Moreover, we also found that GaAs nucleation growth prefers to uniform and smooth 2D nucleation film when the growth temperature approached to 420°C. Furthermore, it is demonstrated that very tight control of V/III ratios can improve the thin and morphology of GaAs epilayer on Si substrate. The GaAs nucleation layers at 420°C with the thickness of 10nm and 30nm were grown at V/III ratio of 189 and 94, respectively. The smooth surface GaAs/Si integration is recognized as a potential buffer for further channel materials, such as In (Ga)As, In(Ga)Sb, to be continuously grown on it.