PEALD Silicon Carbonitride Films using a Silazane Precursor and Its Resistive Switching Behavior

碩士 === 國立交通大學 === 材料科學與工程學系所 === 107 === Plasma-enhanced chemical vapor deposited (PECVD) N-rich silicon carbonitride (SiCxNy) thin-films have been demonstrated as a promising candidate for resistive random-access memory (ReRAM) candidate owing to the conductive bridge random access memory (CBRAM)....

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Bibliographic Details
Main Authors: Hsu, Yu-Lin, 許玉霖
Other Authors: Lue, Jih-perng
Format: Others
Language:en_US
Published: 2019
Online Access:http://ndltd.ncl.edu.tw/handle/kuptda