Study on the Resistive Switching Characteristics of HfOx-Based Resistive Random Access Memory (RRAM) Devices
碩士 === 國立交通大學 === 電子研究所 === 107 === Non-volatile, high switching speed, low operation voltages and simple structure were the advantages of resistive random access memory (RRAM) for high competitiveness in the field of memory technology. Recently, RRAM had attracted great attention and be supposed to...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2018
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| Online Access: | http://ndltd.ncl.edu.tw/handle/b4eywy |