Operation and RTN Characteristics of High-k/Metal-gate Gate-All-Around Poly-Silicon Nanowire Transistors
碩士 === 國立交通大學 === 電子研究所 === 107 === In this thesis, we study the operation and random telegraph noise (RTN) of gate-all-around (GAA) poly-Si nanowire (NW) transistors fabricated with a cost-effective approach based on I-Line lithography. By using source/drain spacers and nitride hardmask methods, th...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2018
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| Online Access: | http://ndltd.ncl.edu.tw/handle/298xku |