Analysis on GeSn and Simulation of Tunneling Diode
碩士 === 國立交通大學 === 電子研究所 === 107 === We calculated the band structure of unstrained Ge1-xSnx by the empirical pseudopotential. From the band structure, we extracted the effective mass of holes and electrons along different crystallographic directions and the wave functions. With the values extracted...
| Main Authors: | , |
|---|---|
| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2018
|
| Online Access: | http://ndltd.ncl.edu.tw/handle/p6het3 |