Investigations of High-mobility Germanium and Advanced FinFET Structure for 5 nm Node MOSFET Devices
博士 === 國立交通大學 === 電子研究所 === 107 === In this dissertation, investigations of high-mobility germanium (Ge) and an advanced FinFET structure for 5 nm node MOSFET were proposed. The corresponding discussions can be divided into two parts. One is the development of Ge devices regarding low-resistance met...
| Main Authors: | , |
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| Format: | Others |
| Language: | en_US |
| Published: |
2018
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| Online Access: | http://ndltd.ncl.edu.tw/handle/7qsk8n |