Simulation and Analysis of III-V and Si Negative-Capacitance FETs Considering Quantum Capacitance
碩士 === 國立交通大學 === 電子研究所 === 107 === This thesis investigates the subthreshold characteristics and ON-state inversion charges (QINV) for gate-all-around (GAA) and double-gate (DG) III-V/Si negative-capacitance FETs (NCFETs) considering quantum capacitance (Cq) by using numerical simulation coupled w...
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| Format: | Others |
| Language: | en_US |
| Published: |
2018
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| Online Access: | http://ndltd.ncl.edu.tw/handle/j797vp |