Design and Fabrication of 808nm Gain-Switched Semiconductor Lasers
碩士 === 國立交通大學 === 電子研究所 === 107 === First, we simulate the rate equation of gain-switched laser, and the result shows that we can generate laser pulses about 100 ps long, with the peak pulse power beyond the level of watt when we have a laser diode design with a very small confinement factor(<0.0...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2019
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| Online Access: | http://ndltd.ncl.edu.tw/handle/ubty7m |