Process and Characterization of 4H-SiC UMOSFET with Thick Bottom Oxide
碩士 === 國立交通大學 === 電子研究所 === 107 === As a wide-bandgap material, SiC has the advantages of high blocking voltage and high thermal conductivity. This is suitable for the applications of high voltage power devices and occupies the market of Si-based power devices. Nevertheless, large amounts of interfa...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2019
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| Online Access: | http://ndltd.ncl.edu.tw/handle/3fs3kh |