Properties and Reliability Investigation in Tellurium-Based Conductive Bridge Random Access Memory
博士 === 國立交通大學 === 電子研究所 === 107 === The CBRAM devices with Tellurium as ion source are investigated in this thesis, which are categorized into three parts. In the first part, oxygen-free SiN is used as resistive layer, which prevents oxygen vacancies from being the composition of conductive filament...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2019
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| Online Access: | http://ndltd.ncl.edu.tw/handle/977at2 |