Zirconium oxide-based resistive switching memory for neuromorphic computing applications
碩士 === 國立交通大學 === 電子研究所 === 107 === Resistive random access memory (RRAM) is the most promising nonvolatile memory in the future, due to its serval advantages, low power consumption, high operation speed, and 3D compatible architecture……etc. Another potential application of RRAM is to implement it t...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2019
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| Online Access: | http://ndltd.ncl.edu.tw/handle/q847ky |