Advanced Process Technology Development of InAs Channel HEMTs for High-Speed and Low-Power Logic Applications
博士 === 國立交通大學 === 電子研究所 === 107 === While the manufacture process of InxGa1-xAs metal oxide semiconductor field effect transistors (MOSFETs) to address the leakage current issues for low power logic applications has been extensively investigated, fabrication process development for InAs channel high...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2019
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| Online Access: | http://ndltd.ncl.edu.tw/handle/tqsy5k |