Investigation on Zirconium-Doping Effect of Negative Capacitance Transistors with Ferroelectric Hafnium Zirconium Oxides
碩士 === 國立交通大學 === 電子物理系所 === 107 === In recent years, novel ferroelectric negative capacitance field effect transistors (NCFET) have been widely investigated. NCFETs can overcome the physical limitation of Boltzmann tyranny in room temperature, resulting in the subthreshold swing below 60mV/decade....
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| Format: | Others |
| Language: | en_US |
| Published: |
2019
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| Online Access: | http://ndltd.ncl.edu.tw/handle/7gkuqq |