Characteristics of InxGa1-xN epilayers and AlN/InGaN heterostructures grown by molecular beam epitaxy
碩士 === 國立交通大學 === 電子物理系所 === 107 === InxGa1-xN (0<x<0.2) epilayers and AlN/InxGa1-xN heterostructures grown on GaN substrates were characterized both optically and structurally. All the samples were grown by plasma assisted molecular beam epitaxy (PAMBE) with in-situ reflection high-energy ele...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2019
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| Online Access: | http://ndltd.ncl.edu.tw/handle/6jbxs5 |