Exploring interface and contact effects on MoS2 field-effect transistors
碩士 === 國立交通大學 === 電子物理系所 === 107 === Two-dimensional (2D) layered materials like MoS2 have become a hot research topic in recent years due to their unique physical properties and transport behaviors. There are some experimental reports showing that MoS2 field-effect transistors (FETs) cannot achieve...
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2019
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| Online Access: | http://ndltd.ncl.edu.tw/handle/5677ty |