GaN Power Amplifiers on Si-Substrate Using Load-Pull Design and Flip-Chip SiGe HBT Power Amplifiers Using the GIPD Parallel-Series-Combining Transformer

碩士 === 國立交通大學 === 電信工程研究所 === 107 === This thesis consists of two parts, the first part is GaN Power Amplifiers on Si-Substrate Using Load-Pull Design, and the second part is Flip-Chip SiGe HBT Power Amplifiers Using the GIPD Parallel- Series-Combining Transformer. In the first part, we use load-pu...

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Bibliographic Details
Main Authors: Lin, Feng-Chuan, 林峯全
Other Authors: Meng, Chin-Chun
Format: Others
Language:zh-TW
Published: 2018
Online Access:http://ndltd.ncl.edu.tw/handle/deng2x