Ohmic-Recessed AlGaN/GaN HEMTs with Neutral Beam Etch Technology for High Frequency Power Applications
碩士 === 國立交通大學 === 國際半導體產業學院 === 107 === AlGaN/GaN high electron mobility transistors (HEMTs) devices for the 5th generation mobile networks application have been extensively studied in recent years. Ohmic recess is an effective method to lower the contact resistance and improve device characteristic...
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| Format: | Others |
| Language: | en_US |
| Published: |
2018
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| Online Access: | http://ndltd.ncl.edu.tw/handle/r74h9s |