Electronic and Spin Transport Properties of Fe/MgO/Fe Magnetic Tunnel Junction: Combined First-Principles Calculation and TB-NEGF Method
碩士 === 國立中央大學 === 物理學系 === 107 === Magnetic tunnel junctions (MTJs) have aroused intensive studies for applications in non-volatile magnetic random access memories (MRAMs), which have been widely used, and the most important property of MTJs is the tunneling magnetoresistance (TMR) effect. The giant...
| Main Authors: | , |
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| Format: | Others |
| Language: | en_US |
| Published: |
2019
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| Online Access: | http://ndltd.ncl.edu.tw/handle/yrw7be |