Fluoric self-assembled monolayer (F-SAM) assisted transferring of graphene film and the transport properties on field-effect transistor(FET)
碩士 === 國立中央大學 === 能源工程研究所 === 107 === Graphene field-effect transistors often affect the electronic properties, because of charge scattering, impurities, and residues on the substrate. Therefore, research has proposed the suspended graphene device, the suspended structure to avoid the influence of s...
Main Authors: | , |
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Other Authors: | |
Format: | Others |
Language: | zh-TW |
Published: |
2019
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Online Access: | http://ndltd.ncl.edu.tw/handle/xwfpg4 |