Fabrication and Characterization of T-gate AlIn(Ga)N/AlN/GaN High Electron Mobility Transistors
碩士 === 國立中央大學 === 電機工程學系 === 107 === Lattice matched Al0.83In0.17N/GaN high electron mobility transistors (HEMTs) have attracted a lot of interests as an alternative to the most matured AlGaN/GaN HEMTs for high power millimeter-wave devices because of its high density two dimensional electron gas (2...
| Main Authors: | , |
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2018
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| Online Access: | http://ndltd.ncl.edu.tw/handle/d3r4s6 |