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碩士 === 國立中央大學 === 電機工程學系 === 107 === Gallium nitride (GaN) materials are attractive to be used in high power amplifier and RF power applications for 5G communication technology due to their high breakdown electric field, high electron mobility and high electron saturation speed. However, GaN power d...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2019
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| Online Access: | http://ndltd.ncl.edu.tw/handle/py5j5q |