none
碩士 === 國立中央大學 === 電機工程學系 === 107 === In this study, the device characteristics of the new GaN high electron mobility transistor (HEMT) are discussed. The research focus on: (1) Enhancement-mode (E-mode) GaN HEMT; (2) A new type of E-mode GaN HEMT with a second gate between the main gate and the drai...
| Main Authors: | , |
|---|---|
| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2019
|
| Online Access: | http://ndltd.ncl.edu.tw/handle/j49sr6 |