Design of GaN High Current Density Fin High-Electron-Mobility-Transistors
碩士 === 國立中央大學 === 通訊工程學系在職專班 === 107 === In this study is based on the comparison of FinFET high electron mobility transistors on AlGaN/GaN fabricated on SiC substrates. The FinFET transistor gate not only has good control capability, but also shrinks with Fin size. The characteristics of the device...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2019
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| Online Access: | http://ndltd.ncl.edu.tw/handle/8gmh93 |