Si3N4/SiO2 Compound Films Development and Application for Si-based Metal-Insulator-Semiconductor Photodetectors
碩士 === 國立中央大學 === 照明與顯示科技研究所 === 107 === In order to improve the performance of optoelectronic devices, reducing the dark current has become one of the important targets for the development of them, and a good passivation layer could effectively function. However, the standard of device dark curre...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2019
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| Online Access: | http://ndltd.ncl.edu.tw/handle/6t52c4 |