The study of structural and electronic properties on Si(111) with active nitridation
碩士 === 國立中山大學 === 物理學系研究所 === 107 === The active nitridation surface was prepared with two-step growth through variation of the substrate temperature, cracking power, and different exposure time with NH3 source (purity is 99.5 percent). The surface was then checked through scanning tunneling microsc...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2019
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| Online Access: | http://ndltd.ncl.edu.tw/handle/9v9482 |