A Study on the Electrical Characteristics of Complementary Polycrystalline-Silicon Thin-Film Transistors with a Three-Dimensional Integrated Circuit Structure
碩士 === 國立中山大學 === 電機工程學系研究所 === 107 === The inverter discussed in this paper is different from the traditional CMOS inverter. This inverter is a vertical structure called CFET. It uses Monolithic process technology. The n-type thin film transistor is the bottom device and the p-type thin film transi...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2019
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| Online Access: | http://ndltd.ncl.edu.tw/handle/ge8cuh |