Fabrication of 4 GHz FBAR filter using AlN thin film
碩士 === 國立中山大學 === 電機工程學系研究所 === 107 === In this study, the high frequency FBAR filters are fabricated using film bulk acoustic resonators (FBARs) for 4 GHz band. FBARs are formed using a sandwiched structure with bottom (Mo) and top (Al/Ti) electrodes and aluminum nitride (AlN) piezoelectric thin fi...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2019
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| Online Access: | http://ndltd.ncl.edu.tw/handle/jwk3n2 |