Dual-Metal Gated-PN Type TFET for Improving SS and Leakage Current
碩士 === 國立中山大學 === 電機工程學系研究所 === 107 === In this thesis, we have proposed a new dual metal gated-PN type tunnel field effect transistor with induced inversion layer (DM-PN TFET) to improve subthreshold swing (SS) and leakage current. The metal1 (M1) and metal2 (M2) gates have different workfunctions...
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2019
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| Online Access: | http://ndltd.ncl.edu.tw/handle/aqpbdv |