Design and Characterization of GaN HEMTs by Pulse, Load-Pull, and X-Parameters Measurements
碩士 === 國立清華大學 === 電子工程研究所 === 107 === GaN presents the property of high electronic mobility, high critical electric and low turn on voltage, which make it a better power device material than silicon. However, the performance of the device is restricted by heating effects and the device parameters. T...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2019
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| Online Access: | http://ndltd.ncl.edu.tw/handle/398fts |