| Summary: | 碩士 === 國立清華大學 === 電子工程研究所 === 107 === GaN presents the property of high electronic mobility, high critical electric and low turn on voltage, which make it a better power device material than silicon. However, the performance of the device is restricted by heating effects and the device parameters. Therefore, some researches worked on improving the device performance by changing the device structure. This thesis mainly focuses on GaN HEMT, taking some of the previous researches as reference, and combines with practical methods to design and improve the device performance. In addition, it presents three measurement methods to characterization the devices: pulse I-V, load-pull, and X-parameter measurement.
In chapter 2, the GaN material properties are introduced, followed by the basic GaN HEMT properties. In chapter 3, the three measurement methods for characterizing the devices are presented, including pulse I-V, load-pull, and X-parameter measurement. In chapter 4, a new method to improve the device performance would be introduced. With the new method applied to process technology, the chips can be measured by the three measurements introduced in chapter 3. Finally, the conclusion of the thesis would be made in chapter 5, along with some possible directions of further research.
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