808-nm Laser Diodes in Ridge/Buried-Waveguide Hybrid Structures Fabricated with Intermixing Processing through Vapor-Phase GeAs Diffusion
博士 === 國立清華大學 === 電子工程研究所 === 107 === The germanium diffusion of n-type doping in both p-type and semi-insulating bulk GaAs with GeAs powders plus extra arsenic as the vapor source in quartz ampoules has been demonstrated, and a broad peak (0.86-1.38 eV) in photoluminescence has been observed. The b...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2018
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| Online Access: | http://ndltd.ncl.edu.tw/handle/dueg88 |