Optical and electrical properties of back-gate single-layer molybdenum disulfide device by electron beam bombardment
碩士 === 國立臺灣大學 === 生醫電子與資訊學研究所 === 107 === This study consists in the use of electron beam bombardment to modify the energy band structure and electron transport properties of molybdenum disulfide, by observing changes in the PL spectrum to correspond to electrical transmission characteristics. Sulfu...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2019
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| Online Access: | http://ndltd.ncl.edu.tw/handle/5qw7q4 |