| Summary: | 碩士 === 國立臺灣大學 === 生醫電子與資訊學研究所 === 107 === This study consists in the use of electron beam bombardment to modify the energy band structure and electron transport properties of molybdenum disulfide, by observing changes in the PL spectrum to correspond to electrical transmission characteristics. Sulfur vacancy was generated by bombardment of molybdenum disulfide by electron beam, and the change of FWHM and Trion peak signal was found by Raman and PL spectroscopy, and the phenomenon of PL blue shift was observed, and PL corresponding to different electron beam doses was observed. The characteristic peak displacement and exciton A,exciton B) and Trion characteristic peak ratio increase and decrease and the comparison of three-point electrical measurement results significantly change the electron transport properties and capabilities. Bombardment at a specific dose of electron beam, the maximum value of the blue shift on the PL spectrum and the maximum half width of the Raman in the optical properties. The electron transport property is P-type from the initial state, and is converted to the N-type under bombardment and the electron transport capability Ion / Ioff is significantly increased from the initial state 102 to 106 under the bombardment of the electron beam, increasing by four orders of magnitude. It can be known from the experimental results that the appropriate sulfur vacancies in the molybdenum disulfide not only change the electronic transition behavior and the energy band structure, but also greatly enhance the electron transporting ability of molybdenum disulfide by the dose modulation of the electron beam. In the future, it can be applied to optoelectronic components to modulate the luminescence properties of two-dimensional material components and the electrical transmission of gain optoelectronic crystals.
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