Carrier dynamics and photoluminescence study in type II GaAs/GaAs1-xSbx quantum well
碩士 === 國立臺灣大學 === 光電工程學研究所 === 107 === X-ray diffraction (XRD) is performed to characterize the compositional structure and interfacial properties within GaAs/GaAs1-xSbx single quantum well with (x=0.352, 0.405). Optical properties and carrier dynamics are then investigated by photoluminescence(PL)...
| Main Authors: | , |
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| Format: | Others |
| Language: | en_US |
| Published: |
2019
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| Online Access: | http://ndltd.ncl.edu.tw/handle/3gj4qj |