Improved Graphene-based Hot Electron Transistor for High Frequency Applications
碩士 === 國立臺灣大學 === 光電工程學研究所 === 107 === One of the most important high frequency device is bipolar transistors (BJTs). The cut-off (fT) is limited for the thickness of base region so 2D materials is a great candidate as a material for base region for its ultra-thin thickness. Theoretically, vertical...
| Main Authors: | , |
|---|---|
| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2019
|
| Online Access: | http://ndltd.ncl.edu.tw/handle/9sh99y |