Fabrication and Analysis of High Frequency AlGaN/GaN HEMTs with T-shaped Gate
碩士 === 國立臺灣大學 === 光電工程學研究所 === 107 === In this thesis, we take advantages of the superior properties of Gallium Nitride, such as wide bandgap, high breakdown voltage, high electron mobility to fabricate the RF devices with AlGaN/GaN heterostructures on 4-inch HR-substrate. We replace normal gate str...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2019
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| Online Access: | http://ndltd.ncl.edu.tw/handle/fk6ap3 |