Characterizations of RF Properties of GaN-on-Si HEMTs with Substrate Removal Technology
碩士 === 國立臺灣大學 === 光電工程學研究所 === 107 === With the upsurge of wireless communication market like autonomous vehicle (self-driving car) and fifth-generation wireless systems (5G). Gallium nitride high electron mobility transistors (GaN HEMTs) have gained more focus in recent years. Due to the outstandin...
| Main Authors: | , |
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| Format: | Others |
| Language: | en_US |
| Published: |
2019
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| Online Access: | http://ndltd.ncl.edu.tw/handle/8v6a48 |