Development of High-power High-thermal Conductivity GaN High Electron Mobility Transistors
碩士 === 國立臺灣大學 === 光電工程學研究所 === 107 === In this work, we successfully develop of a high-power high-thermal conductivity GaN High Electron Mobility Transistors (GaN HEMTs). TSV (Through Silicon Via) structure can effectively improve heat dissipation and reduce the effect of thermal effects on devices....
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| Format: | Others |
| Language: | en_US |
| Published: |
2019
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| Online Access: | http://ndltd.ncl.edu.tw/handle/uv4kje |