Comparative study on spin-orbit torque efficiencies from W/ferromagnetic and W/ferrimagnetic heterostructures
碩士 === 國立臺灣大學 === 材料科學與工程學研究所 === 107 === Spin-orbit torque magnetoresistive random access memory (SOT-MRAM) is a promising memory device. Its basic structure is composed of two major parts, spin-Hall induced layer and magnetic layer. For spin-Hall materials, heavy transition metals with large atomi...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2018
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| Online Access: | http://ndltd.ncl.edu.tw/handle/h2pfa8 |