Edge Contacts in Nickel/Graphene Field Effect Transistors
碩士 === 國立臺灣大學 === 材料科學與工程學研究所 === 107 === Nowadays, the size of transistors is smaller and smaller for demands of higher chip performance and lower power consumption. However, when transistors were fabricated into nanoscale, a lot of problems arise. Such as Drain Induced Barrier Lower (DIBL), mobili...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2019
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| Online Access: | http://ndltd.ncl.edu.tw/handle/swynfy |