Investigation of III-V High Electron Mobility Transistors and the Approaches of the Threshold-voltage Modulation
博士 === 國立臺灣大學 === 電子工程學研究所 === 107 === This dissertation mainly focuses on the strategies of threshold-voltage (Vth) modulation to achieve E-mode operation for III-V high-electron-mobility transistors (HEMTs). First one is to form the fin-shaped channel on HEMT with the Schottky-gate which is called...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2019
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| Online Access: | http://ndltd.ncl.edu.tw/handle/4zv99g |