Interface Trap Density and Hysteresis Reduction of Ge MISCAPs and Effective Work Function Modulation
博士 === 國立臺灣大學 === 電子工程學研究所 === 107 === As the transistor scaling continues and performance requirements increase, using high mobility Ge to replace Si as the channel material to enhance drive current is proposed. For Ge channel material, the most crucial issue is to form high-quality gate stacks wit...
| Main Authors: | , |
|---|---|
| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2019
|
| Online Access: | http://ndltd.ncl.edu.tw/handle/yzrv7s |