A 10-bit 200-MS/s SAR ADC with Dual-loop Asynchronous Control in 90nm CMOS

碩士 === 國立臺灣大學 === 電子工程學研究所 === 107 === This thesis proposes a control architecture for successive-approximation (SAR) analog-to-digital converters (ADCs). A single-channel 10-bit 200-MS/s asynchronous SAR ADC in 90-nm CMOS process was realized based on the proposed architecture. The proposed archite...

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Main Authors: Li-Yuan Hsu, 許力元
Other Authors: 陳中平
Format: Others
Language:en_US
Published: 2019
Online Access:http://ndltd.ncl.edu.tw/handle/69y5f4
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spelling ndltd-TW-107NTU054280882019-11-16T05:28:00Z http://ndltd.ncl.edu.tw/handle/69y5f4 A 10-bit 200-MS/s SAR ADC with Dual-loop Asynchronous Control in 90nm CMOS 一個以雙迴路非同步控制之九十奈米十位元每秒取樣二億次的逐漸趨近式類比數位轉換器 Li-Yuan Hsu 許力元 碩士 國立臺灣大學 電子工程學研究所 107 This thesis proposes a control architecture for successive-approximation (SAR) analog-to-digital converters (ADCs). A single-channel 10-bit 200-MS/s asynchronous SAR ADC in 90-nm CMOS process was realized based on the proposed architecture. The proposed architecture is a dual-loop asynchronous control scheme. It reduce the waste time problem in LSB steps, which result from the architectural limitation of a conventional asynchronous control. Therefore, increase the speed. The physical design was implement in TSMC 90-nm CMOS process. The core area is 115 µm × 192 µm. From post-layout simulation, at 0.9 V supply voltage and 200-MS/s sampling rate, the total power consumption is 1.61 mW, and ENOB is 9.26 bits. The prediction of maximum 1-sigma DNL and INL are 0.298 LSB and 0.35 LSB respectively This design is in fabrication process and was taped out at 2019/07/10。The chip out was scheduled to 2019/09/26. 陳中平 2019 學位論文 ; thesis 73 en_US
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description 碩士 === 國立臺灣大學 === 電子工程學研究所 === 107 === This thesis proposes a control architecture for successive-approximation (SAR) analog-to-digital converters (ADCs). A single-channel 10-bit 200-MS/s asynchronous SAR ADC in 90-nm CMOS process was realized based on the proposed architecture. The proposed architecture is a dual-loop asynchronous control scheme. It reduce the waste time problem in LSB steps, which result from the architectural limitation of a conventional asynchronous control. Therefore, increase the speed. The physical design was implement in TSMC 90-nm CMOS process. The core area is 115 µm × 192 µm. From post-layout simulation, at 0.9 V supply voltage and 200-MS/s sampling rate, the total power consumption is 1.61 mW, and ENOB is 9.26 bits. The prediction of maximum 1-sigma DNL and INL are 0.298 LSB and 0.35 LSB respectively This design is in fabrication process and was taped out at 2019/07/10。The chip out was scheduled to 2019/09/26.
author2 陳中平
author_facet 陳中平
Li-Yuan Hsu
許力元
author Li-Yuan Hsu
許力元
spellingShingle Li-Yuan Hsu
許力元
A 10-bit 200-MS/s SAR ADC with Dual-loop Asynchronous Control in 90nm CMOS
author_sort Li-Yuan Hsu
title A 10-bit 200-MS/s SAR ADC with Dual-loop Asynchronous Control in 90nm CMOS
title_short A 10-bit 200-MS/s SAR ADC with Dual-loop Asynchronous Control in 90nm CMOS
title_full A 10-bit 200-MS/s SAR ADC with Dual-loop Asynchronous Control in 90nm CMOS
title_fullStr A 10-bit 200-MS/s SAR ADC with Dual-loop Asynchronous Control in 90nm CMOS
title_full_unstemmed A 10-bit 200-MS/s SAR ADC with Dual-loop Asynchronous Control in 90nm CMOS
title_sort 10-bit 200-ms/s sar adc with dual-loop asynchronous control in 90nm cmos
publishDate 2019
url http://ndltd.ncl.edu.tw/handle/69y5f4
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