A 10-bit 200-MS/s SAR ADC with Dual-loop Asynchronous Control in 90nm CMOS
碩士 === 國立臺灣大學 === 電子工程學研究所 === 107 === This thesis proposes a control architecture for successive-approximation (SAR) analog-to-digital converters (ADCs). A single-channel 10-bit 200-MS/s asynchronous SAR ADC in 90-nm CMOS process was realized based on the proposed architecture. The proposed archite...
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ndltd-TW-107NTU054280882019-11-16T05:28:00Z http://ndltd.ncl.edu.tw/handle/69y5f4 A 10-bit 200-MS/s SAR ADC with Dual-loop Asynchronous Control in 90nm CMOS 一個以雙迴路非同步控制之九十奈米十位元每秒取樣二億次的逐漸趨近式類比數位轉換器 Li-Yuan Hsu 許力元 碩士 國立臺灣大學 電子工程學研究所 107 This thesis proposes a control architecture for successive-approximation (SAR) analog-to-digital converters (ADCs). A single-channel 10-bit 200-MS/s asynchronous SAR ADC in 90-nm CMOS process was realized based on the proposed architecture. The proposed architecture is a dual-loop asynchronous control scheme. It reduce the waste time problem in LSB steps, which result from the architectural limitation of a conventional asynchronous control. Therefore, increase the speed. The physical design was implement in TSMC 90-nm CMOS process. The core area is 115 µm × 192 µm. From post-layout simulation, at 0.9 V supply voltage and 200-MS/s sampling rate, the total power consumption is 1.61 mW, and ENOB is 9.26 bits. The prediction of maximum 1-sigma DNL and INL are 0.298 LSB and 0.35 LSB respectively This design is in fabrication process and was taped out at 2019/07/10。The chip out was scheduled to 2019/09/26. 陳中平 2019 學位論文 ; thesis 73 en_US |
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碩士 === 國立臺灣大學 === 電子工程學研究所 === 107 === This thesis proposes a control architecture for successive-approximation (SAR) analog-to-digital converters (ADCs). A single-channel 10-bit 200-MS/s asynchronous SAR ADC in 90-nm CMOS process was realized based on the proposed architecture. The proposed architecture is a dual-loop asynchronous control scheme. It reduce the waste time problem in LSB steps, which result from the architectural limitation of a conventional asynchronous control. Therefore, increase the speed.
The physical design was implement in TSMC 90-nm CMOS process. The core area is 115 µm × 192 µm. From post-layout simulation, at 0.9 V supply voltage and 200-MS/s sampling rate, the total power consumption is 1.61 mW, and ENOB is 9.26 bits. The prediction of maximum 1-sigma DNL and INL are 0.298 LSB and 0.35 LSB respectively
This design is in fabrication process and was taped out at 2019/07/10。The chip out was scheduled to 2019/09/26.
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author2 |
陳中平 |
author_facet |
陳中平 Li-Yuan Hsu 許力元 |
author |
Li-Yuan Hsu 許力元 |
spellingShingle |
Li-Yuan Hsu 許力元 A 10-bit 200-MS/s SAR ADC with Dual-loop Asynchronous Control in 90nm CMOS |
author_sort |
Li-Yuan Hsu |
title |
A 10-bit 200-MS/s SAR ADC with Dual-loop Asynchronous Control in 90nm CMOS |
title_short |
A 10-bit 200-MS/s SAR ADC with Dual-loop Asynchronous Control in 90nm CMOS |
title_full |
A 10-bit 200-MS/s SAR ADC with Dual-loop Asynchronous Control in 90nm CMOS |
title_fullStr |
A 10-bit 200-MS/s SAR ADC with Dual-loop Asynchronous Control in 90nm CMOS |
title_full_unstemmed |
A 10-bit 200-MS/s SAR ADC with Dual-loop Asynchronous Control in 90nm CMOS |
title_sort |
10-bit 200-ms/s sar adc with dual-loop asynchronous control in 90nm cmos |
publishDate |
2019 |
url |
http://ndltd.ncl.edu.tw/handle/69y5f4 |
work_keys_str_mv |
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